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ZXMHN6A07T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (V GS = 1 0 V; T A = 2 5 ° C) (b) (d)
(V GS = 1 0 V; T A = 7 0 ° C) (b) (d)
(V GS = 1 0 V; T A = 2 5 ° C) (a) (d)
SYMBOL
V DSS
V GS
I D
LIMIT
60
± 20
1.6
1.3
1.4
UNIT
V
V
A
A
A
Pulsed drain current
(c)
I DM
9
A
Continuous source current (body diode) (b) (d)
I S
1
A
Pulsed source current (body diode)
(c)
I SM
9
A
Total power dissipation at T A = 2 5 ° C
P TOT
Any Single transistor " on" (a) (d)
Single transistor ‘ on’ (b) (d)
Two transistors ‘ on’ equally (a) (e)
Linear derating factor above 2 5 ° C (a)
Single transistor " on" (a) (d)
Single transistor ‘ on’ (b) (d)
Two transistors ‘ on’ equally (a) (e)
Thermal resistance - junction to ambient
Single transistor " on" (a) (d)
R th(j-amb)
1.1
1.4
1.6
8.8
11.2
13.2
114
W
W
W
mW/° C
mW/° C
mW/° C
° C/W
Single transistor " on"
(b) (d)
89
° C/W
Two transistors ‘ on’ equally (a) (e)
76
° C/W
Operating and storage temperature range
T j , T stg
-55 to + 150
°C
(a) For a device mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2oz weight copper in still air conditions with the
heat sink split into three equal areas, one for each drain connection.
(b) For a device surface mounted on a FR4 PCB at t
= 10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, duty cycle 2% , pulse width 300 S in still air conditions with the heat sink split into three
equal areas, one for each drain connection.
(d) For device with one active die.
(e) For any two die not sharing the same drain connection.
ISSUE 2 - MAY 2004
SEMICONDUCTORS
2
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